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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D372
BLV2047 UHF power transistor
Product specification Supersedes data of 1999 Jan 28 1999 Jun 09
Philips Semiconductors
Product specification
UHF power transistor
FEATURES * Emitter ballasting resistors for optimum temperature profile * Gold metallization ensures excellent reliability * Internal input and output matching for easy design of wideband circuits * AlN substrate package for environmental safety. APPLICATIONS
handbook, halfpage
BLV2047
PINNING - SOT468A PIN 1 2 3 collector base emitter; connected to flange DESCRIPTION
1
* Common emitter class-AB operation for PCN (Personal Communication Networks) and PCS (Personal Communication Services) base station applications in the 1800 to 2000 MHz frequency range.
Top view
3 2
MBK200
DESCRIPTION NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB f (MHz) 2000 f1 = 2000.0; f2 = 2000.1 VCE (V) 26 26 PL (W) 60 60 (PEP) Gp (dB) 8.5 9 C (%) 40 33 dim (dBc) - -30
Fig.1 Simplified outline.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature operating junction temperature Tmb = 25 C CONDITIONS open emitter open base open collector MIN. - - - - - -65 - MAX. 65 27 3 10 270 +150 200 UNIT V V V A W C C
1999 Jun 09
2
Philips Semiconductors
Product specification
UHF power transistor
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h Note 1. Thermal resistance is determined under specified RF operating conditions. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre Note 1. Capacitance of die only. PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector leakage current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 40 mA open base; IC = 120 mA open collector; IE = 40 mA VCE = 26 V; VBE = 0 VCE = 10 V; IC = 4 A VCB = 26 V; IE = ie = 0; f = 1 MHz; note 1 VCE = 26 V; IC = 0; f = 1 MHz MIN. 65 27 3 - 45 - - TYP. - - - - - 72 41 PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink CONDITIONS Ptot = 270 W; Tmb = 25 C; note 1
BLV2047
VALUE 0.65 0.25
UNIT K/W K/W
MAX. UNIT - - - 8 100 - - pF pF V V V mA
handbook, halfpage
120
MBK396
handbook, halfpage
160
MBK397
hFE
Cre (pF) 120
80
80
40
40
0 0 2 4 6 8 IC (A) 10
0 0 10 20 VCB (V) 30
VCE = 10 V.
f = 1 MHz.
Fig.2
DC current gain as a function of collector current; typical values.
Fig.3
Feedback capacitance as a function of collector-base voltage; typical values.
1999 Jun 09
3
Philips Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Th = 25 C in a common emitter test circuit. MODE OF OPERATION CW, class-AB 2-tone, class-AB CDMA, class-AB Note f (MHz) 2000 f1 = 2000.0 f2 = 2000.1 2000 VCE (V) 26 26 26 ICQ (mA) 300 300 500 PL (W) 60 60 (PEP) 12.5 Gp (dB) 8.5 9 typ. 9 C (%) 40 33
BLV2047
dim (dBc) - -30 -46(1)
typ. 22
1. CDMA test signal with peak to average ratio of 11.9 dB. Adjacent Channel Power (ACP) is measured at 885 kHz offset from the centre of the channel (2000 MHz) using a spectrum analyzer with the resolution set to 30 kHz. Ruggedness in class-AB operation The BLV2047 is capable of withstanding a load mismatch corresponding to VSWR = 3 : 1 through all phases under the following conditions: f1 = 2000.0 MHz; f2 = 2000.1 MHz; VCE = 26 V; ICQ = 300 mA; PL = 60 W (PEP); Tmb = 25 C.
handbook, halfpage G
12 p (dB) 10
MBK398
60
C
handbook, halfpage
100
MBK399
Gp
(%) 50
PL (W) 80
(1) (2) (3)
8
C
40
60
6
30
40
4
20
20
2
10
0 0 20 40 60 80
0 100 PL (W)
0 0 4 8 PD (W) 12
VCE = 26 V; ICQ = 300 mA; f = 2000 MHz.
ICQ = 300 mA; f = 2000 MHz. (1) VCE = 28 V. (2) VCE = 26 V. (3) VCE = 24 V.
Fig.4
Power gain and collector efficiency as a function of load power; typical values.
Fig.5
Load power as a function of drive power; typical values.
1999 Jun 09
4
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
handbook, halfpage
10
MBK400
Gp (dB) 8
Gp
50
C (%)
handbook, halfpage
0
MBK401
d3
(dBc) -10
40
C
6 30 -20
(1)
(2)
4
20
-30
(3)
2
10
-40
0 0 20 40 60
0 80 100 PL (PEP)(W)
-50
0
20
40
60 80 PL (PEP)(W)
VCE = 26 V; ICQ = 300 mA; f1 = 2000 MHz; f2 = 2000.1 MHz.
VCE = 26 V; f1 = 2000 MHz; f2 = 2000.1 MHz. (1) ICQ = 100 mA. (2) ICQ = 300 mA. (3) ICQ = 500 mA.
Fig.6
Power gain and collector efficiency as functions of peak envelope load power; typical values.
Fig.7
Intermodulation products as a function of peak envelope load power; typical values.
handbook, halfpage
0
MBK402
handbook, halfpage
0
MBK925
dim (dBc) -20 d3 d5 -40 d7
ACP (dBc) -20
-40
-60
0
20
40
60 80 PL (PEP)(W)
-60
0
4
8
12
16
20 PL (W)
VCE = 26 V; ICQ = 300 mA; f1 = 2000 MHz; f2 = 2000.1 MHz.
VCE = 26 V; ICQ = 500 mA. Measured at 885 kHz offset with 30 kHz bandwidth. CDMA test signal with 11.9 dB peak to average ratio.
Fig.8
Intermodulation products as a function of peak envelope load power; typical values.
Fig.9
Adjacent channel power as a function of load power; typical values.
1999 Jun 09
5
Philips Semiconductors
Product specification
UHF power transistor
List of components (see Figs 10 and 11) COMPONENT C1, C8 C2 C3, C4 C5 C6, C12 C7 C9 C10 C11 L1 L2 L3 L4 L5, L14, L15 L6 L7 L8 L9 L10 L11 L12 L13 R1 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 175B or capacitor of same quality. 3. American Technical Ceramics type 100B or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board with Teflon dielectric (r = 6.15); thickness 0.64 mm. DESCRIPTION multilayer ceramic chip capacitor; note 1 Tekelec variable capacitor; type 37291 Tekelec variable capacitor; type 37271 multilayer ceramic chip capacitor, note 2 tantalum SMD capacitor feedthrough capacitor multilayer ceramic chip capacitor, note 3 multilayer ceramic chip capacitor, note 3 feedthrough capacitor stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 grade 4B1 ferroxcube chip-bead 4 turns enamelled 1 mm copper wire stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 stripline; note 4 standard chip resistor 30 nH 7.3 6.8 43.7 5.6 18.8 53.3 17.4 10 int.dia. 3 mm; length 7 mm length 4 mm; width 11.8 mm length 4 mm; width 12.8 mm length 12.5 mm; width 1 mm length 8.5 mm; width 15.9 mm length 1 mm; width 3.9 mm length 3.4 mm; width 0.8 mm length 6.5 mm; width 4.3 mm type 0603 VALUE 22 pF 0.8 to 8 pF 0.6 to 4.5 pF 22 pF 10 F, 35 V 1.5 nF 13 pF 10 nF 3.3 nF 18.8 21.9 13 4.5 length 6.1 mm; width 3.9 mm length 5 mm; width 3.2 mm length 1.4 mm; width 6.1 mm length 6.6 mm; width 20.2 mm DIMENSIONS
BLV2047
CATALOGUE NO.
4322 020 34420
1999 Jun 09
6
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
handbook, full pagewidth
40
40
50
+Vbias
+VCE
R1 L5 C6 C7 C8 C10 L6 L9 C9 L15 L14 L12 L13 C4 C3 C11 C12 C5 50 output
50 input
C1 L1 C2 L2 L3 L4 L7 L8 L10 L11
MBK406
Dimensions in mm. The components are situated on one side of the copper-clad Teflon board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization.
Fig.10 Component layout for 2000 MHz class-AB test circuit.
1999 Jun 09
7
Philips Semiconductors
Product specification
UHF power transistor
BLV2047
handbook, full pagewidth
L15 L14 +Vbias C6 L6 L4 C1 L3 L1 L2 L7 DUT L8 L5 C7 C9 C10 C8 L9 L10 L12 L11 L13 C5 50 output R1 C11 C12 +VCE
50 input
C2
C3
C4
MBK405
For CDMA measurements: Replace L5, C7 and C11 by a bridging wire. Change L6 from 6 turns to 2 turns (same diameter). Add 4.7 F, 50 V tantalum capacitor to C12. Add 100 pF ATC type 100A capacitor to C8.
Fig.11 Class-AB test circuit for 2000 MHz.
1999 Jun 09
8
Philips Semiconductors
Product specification
UHF power transistor
Scattering parameters: VCE = 26 V; IC = 1 A f (MHz) 1500 1600 1700 1800 1850 1900 1950 2000 2100 2200 2300 2400 2500 S11 MAGNITUDE (ratio) 0.982 0.970 0.947 0.870 0.779 0.775 0.863 0.913 0.950 0.955 0.955 0.948 0.937 ANGLE (deg) 173.3 172.0 170.4 167.5 169.9 179.3 -178.0 -179.4 178.0 176.4 175.0 173.7 172.4 S21 MAGNITUDE (ratio) 0.169 0.227 0.349 0.633 0.838 0.833 0.644 0.456 0.285 0.190 0.145 0.162 0.143 ANGLE (deg) 131.8 126.1 114.3 85.8 59.5 22.7 -6.9 -24.5 -40.8 -54.0 -53.6 -60.4 -84.2 S12 MAGNITUDE (ratio) 0.031 0.035 0.037 0.036 0.034 0.018 0.011 0.018 0.028 0.031 0.034 0.036 0.038 ANGLE (deg) 106.4 96.0 93.3 74.7 60.4 47.4 103.7 121.2 114.7 115.2 114.7 116.7 116.8
BLV2047
S22 MAGNITUDE (ratio) 0.967 0.953 0.929 0.879 0.845 0.902 0.967 0.990 0.995 0.987 0.983 0.975 0.973 ANGLE (deg) 174.6 174.0 173.8 174.2 178.0 -177.4 -178.7 179.3 176.9 175.5 175.0 174.4 173.9
handbook, halfpage
5
MBK403
Zi
handbook, halfpage
3
MBK404
ZL
() 4
ri
() 2
RL
1 3 0 2 xi 1 -1 -2 -3 1700 XL
0 1700
1800
1900
f (MHz)
2000
1800
1900
f (MHz)
2000
VCE = 26 V; ICQ = 300 mA; PL = 60 W; Tmb = 25 C.
VCE = 26 V; ICQ = 300 mA; PL = 60 W; Tmb = 25 C.
Fig.12 Input impedance as a function of frequency (series components); typical values.
Fig.13 Load impedance as a function of frequency (series components); typical values.
1999 Jun 09
9
Philips Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE Flanged ceramic (AIN) package; 2 mounting holes; 2 leads
BLV2047
SOT468A
D
A F
3
D1
U1 q C
B c
1
H
U2
p w1 M A B
E1
E
A
2
b w2 M C Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 5.23 4.62 0.206 0.182 b 11.81 11.58 0.465 0.455 c 0.15 0.10 0.006 0.004 D 15.39 15,09 0.606 0.594 D1 15.37 15,11 0.605 0.595 E E1 F 1.65 1.60 0.065 0.063 H 16.74 16.48 0.659 0.649 p 3.30 3.05 0.130 0.120 Q 2.21 2.06 0.087 0.081 q 20.32 0.800 U1 25.53 25.27 1.005 0.995 U2 9.91 9.65 0.390 0.380 w1 0.254 0.01 w2 0.508 0.02
10.26 10.29 10.06 10.03 0.404 0.405 0.396 0.395
OUTLINE VERSION SOT468A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-12-24
1999 Jun 09
10
Philips Semiconductors
Product specification
UHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLV2047
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
1999 Jun 09
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125002/06/pp12
Date of release: 1999 Jun 09
Document order number:
9397 750 05856

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